High-performance photovoltaic products for unrivalled performance and yields
3SUN CORE-H® technology converts the highest amount of sunlight in any installation condition
Our modules are the result of decades of experience in developing HJT technology, and ensure maximum reliability and durability
We manufacture our products in Italy with fully automated processes according to the strictest quality criteria
High efficiency and power, excellent durability and stability with optimum temperature coefficients and an unrivalled warranty package
Effective conversion of the light reaching the back of the module significantly improves the energy yield of a system
A power rating that allows fewer modules to be installed for the same photovoltaic system size
In 2.172x1.303 m format: high power to improve the productivity of roof-mounted and ground-mounted photovoltaic systems
Category A modules produced in Europe with efficiency above 21.5%
2% maximum degradation of rated power after one year. 0.4% for subsequent years. 0% photoinduced degradation
A robust construction with high-quality materials and a low-temp process that prevents thermo-mechanical stress and micro-cracks
High level of conversion of the light reaching the back of the module, for enhanced system energy yield
Module with reduced format for greater installation flexibility
3SUN CORE-H® solar cells
3SUN CORE-H® technology converts the highest amount of sunlight on both sides of the module, elevating solar energy beyond the limits of the PERC, PERT and TOPCon
Innovative transparent and conductive anti-reflection coating, optimized to improve sunlight transmission and convey the generated electrical charges towards the metal conducting grid
P and N amorphous silicon layers applied to maximize the conversion of energy and the conduction of electrical charges by preventing losses and avoiding recombination at the interfaces
Ultra-thin, n-type silicon wafers allow excellent performance and stability while lowering the environmental impact
Narrow grid multi-busbar technology adopted to minimize resistive losses through improved collection and conduction of electrical charges
Micro-layers deposited to improve output voltage. Using a quantum tunnelling mechanism to create a perfect junction with the crystalline silicon, giving rise to the term “hetero-junction”
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